Performance Comparison of Si IGBT and SiC MOSFET Power Module Driving IPMSM or IM under WLTC

The cumulative inverter losses and power consumption of a silicon insulated gate bipolar transistor (Si IGBT) three types carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) were evaluated on an electric motor test bench under worldwide harmonized light vehicles cycle (WLTC). SiC MOSFETs showed higher performance than Si IGBT regardless the type vehicles. In case driving interior permanent magnet synchronous (IPMSM), latest 4th generation MOSFET (SiC-4G) in ROHM has lowest loss energy compared with other generations. induction (IM), hand, 2nd (SiC-2G) best despite fact that SiC-2G are slightly larger SiC-4G. or later device does not necessarily contribute to better total system by simply replacing early devices.